کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363012 | 1388295 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3 plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By Hall-effect measurement, a p-type conductivity was observed for the treated film with the hole density of 2.2Â ÃÂ 1016Â cmâ3. X-ray photoelectron spectroscopy (XPS) results confirmed that nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions. In low temperature photoluminescence spectra, an emission peak corresponding to acceptor-donor pair was observed. From this emission peak we calculated the N-related acceptor binding energy to be 130Â meV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 9, 28 February 2008, Pages 2900-2904
Journal: Applied Surface Science - Volume 254, Issue 9, 28 February 2008, Pages 2900-2904
نویسندگان
P. Cao, D.X. Zhao, J.Y. Zhang, D.Z. Shen, Y.M. Lu, B. Yao, B.H. Li, Y. Bai, X.W. Fan,