A study of copper oxide based resistive switching memory by conductive atom force microscope

A copper oxide (CuxO) layer was formed by applying plasma oxidization on a copper film grown on a Si substrate. Pt deposited on this CuxO layer then function as the top electrode to form a Pt/CuxO/Cu structure. A device created with this structure exhibited a forming-free bipolar resistive switching property. Conductive atom force microscope (C-AFM) was employed to investigate the nanoscale electrical properties of the device. Based on I-V curve analysis, it was found that the Poole-Frankel and conducting filaments models were suitable for the present device. C-AFM analysis for the sample indicated that the random formation/rupture of conducting paths in the CuxO layer may play a key role for the device instability in high resistance state.

► CuO film was fabricated by plasma oxidation method. ► Film structure property was characterized by XRD analysis. ► The resistive switching property of Pt/CuxO/Cu was studied by C-AFM and DC sweeping. ► O vacancies conductive filament is the mechanism for Pt/CuxO/Cu switching properties. ► The random formation/rupture of conductive filaments causes the instability of HRS.