کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363257 | 1388299 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and magnetic properties of NiZn ferrite films with high saturation magnetization deposited by magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural and magnetic properties of NiZn ferrite films with high saturation magnetization deposited by magnetron sputtering Structural and magnetic properties of NiZn ferrite films with high saturation magnetization deposited by magnetron sputtering](/preview/png/5363257.png)
چکیده انگلیسی
NiZn ferrite films with well-defined spinel crystal structure were in situ fabricated by radio frequency magnetron sputtering at room temperature. The microstructures and static magnetic properties of the films' dependence on the partial pressure ratio of argon to oxygen gas were investigated. Scanning electron microscope images indicated that all the films consisted of particles nanocrystalline in nature and the sizes increase as the ratio increases in the range of 10-25 nm. A large saturation magnetization (237.2 emu/cm3) and a minimum of coercivity (68 Oe) were obtained when the ferrite film was deposited in the ratio of 4:1. The complex permeability values (μ = μâ²âiμâ³) of the film were measured at frequency up to 5 GHz. It was shown that the film exhibited a large real part of permeability μⲠof 18 and a very high resonance frequency fr of 1.2 GHz. The results suggested that the NiZn ferrite film as-deposited in the ratio of 4:1 may be promised as magnetic medium in the application of integrated circuits operating at microwave frequencies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 8, 1 February 2010, Pages 2319-2322
Journal: Applied Surface Science - Volume 256, Issue 8, 1 February 2010, Pages 2319-2322
نویسندگان
Dangwei Guo, Xiaolong Fan, Guozhi Chai, Changjun Jiang, Xiling Li, Desheng Xue,