کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363306 | 1388299 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by X-ray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO2 molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO2, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 8, 1 February 2010, Pages 2606-2610
Journal: Applied Surface Science - Volume 256, Issue 8, 1 February 2010, Pages 2606-2610
نویسندگان
Gaolin Zheng, Anli Yang, Hongyuan Wei, Xianglin Liu, Huaping Song, Yan Guo, Caihong Jia, Chunmei Jiao, Shaoyan Yang, Qinsheng Zhu, Zhanguo Wang,