کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5363327 | 1388300 | 2011 | 4 صفحه PDF | دانلود رایگان |

The Si1âxGex thin layer is fabricated by two-step Ge ion implantation into (0Â 0Â 1) silicon. The embedded SiGe nanoclusters are produced in the Si1âxGex layer upon further annealing. The number and size of the nanoclusters changed due to the Ge diffusion during annealing. Micro defects around the nanoclusters are illustrated. It is revealed that the change of Si-Si phonon mode is causing by the nanoclusters and micro defects.
⺠The embedded SiGe nanoclusters in Si1-xGex layer were fabricated by two-step Ge ion implantation and subsequent annealing in this work. ⺠Two kinds of anneal processes (FA & RTA) were used. ⺠We found that the micro-defects can be avoided by RTA process, which anneal time should less than 480 s. ⺠The structural properties during annealing were discussed in detail. ⺠Additionally, the phonon confinement effect has been found by the Si-Si phonon modes investigation obtained from the Si matrix and SiGe layer, respectively.
Journal: Applied Surface Science - Volume 257, Issue 22, 1 September 2011, Pages 9260-9263