Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

► We examine changes of the structure for HfSiO and HfSiON film with different annealing temperature by photoelectron spectroscopy. ► Core level photoelectron spectra have revealed the mechanism of metallization reaction at the bottom interface between the HfSiO(N) film and Si substrate under vacuum annealing. ► We find that Silicidation action occurs by annealing at 850 and 900°C for HfSiO and HfSiON film, respectively.