Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS

► Oxidation of SiGeC blanket layers for Ge enrichment is studied with ToF-SIMS. ► An original quantification protocol, the extended Full Spectrum protocol, is used. ► Improvements brought by this protocol over more classic ones are highlighted. ► This study yields useful information for comprehension of the oxidation mechanisms.