CdS thin films growth by fast evaporation with substrate rotation

► CdS films deposited by fast evaporation technique combined with substrate rotation. ► Source evaporation temperature was 600 °C and the substrate temperature at 350 °C. ► CdS films were flat with uniform thickness. ► XRD shows that it is possible tailor the CdS hexagonal or cubic phase. ► Short circuit photocurrent density losses in the glass/CdS were 6.6 mA/cm2.