Formation mechanism of Si(1Â 0Â 0) surface morphology in alkaline fluoride solutions

- Different surface morphology are obtained in different alkaline fluoride solutions.
- No Si-F bond exists, F− and CO32− ions accelerate the condensation of Si-OH groups.
- Bare silicon and silicon oxide coexist at the wafer surface during etching process.
- Silicon oxides determine surface morphology in alkaline fluoride solution.