Surface morphology of Si layers grown on SiO2

► Si crystals appear to be larger and uniform when Si is grown on SiO2 covered with an array of Ge islands. ► Si crystals grown on SiO2 have a rounded shape at the surface, indicating the presence of high concentration of threading dislocations. ► Si crystals grown on SiO2 at temperatures in the 430-550 °C range produce photoluminescence in the 1.5 μm region.