کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5363464 1503696 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structures in unoccupied states of Bi thin film studied with two-photon photoemission spectroscopy
ترجمه فارسی عنوان
ساختارهای الکترونیک در حالت های بی سابقه فیلم بی نوری بی مطالعه با طیف سنجی فوتوم فوتومتر مورد مطالعه قرار گرفت
کلمات کلیدی
بیسموت، طیف سنجی فوتومن فوتون، حالت کوانتومی خوب، ساختار الکترونیکی،
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
چکیده انگلیسی

We have performed synchrotron-radiation angle-resolved photoemission and angle-resolved two-photon photoemission (2PPE) study of Bi(1 1 1) films with the thickness of 12 bilayers grown on Si(1 1 1) - 7 × 7. From the detailed analysis of the excitation energy dependence of angle-resolved 2PPE spectra, we have determined the electronic structures in the occupied and unoccupied regions. The observed electronic structures in the unoccupied states above the Fermi-energy were attributed to the quantum-well states originate from the quantization of the 6p-derived bulk bands.

► In this study, we performed the angle-resolved two-photon photoemission of Bi(1 1 1) thin film with the thickness of 12 bilayers grown on Si (1 1 1) - 7 × 7. ► The electronic structures and energy dispersion in the unoccupied region above the Fermi-energy were determined. ► These observed unoccupied electronic states were attributed to the quantum-well states derived from the quantization of the 6p-derived bulk bands.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 267, 15 February 2013, Pages 66-69
نویسندگان
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