Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

► The impact of 15 nm Schottky gate contact layer based on conductive Ir oxides grown by RTA in O2 ambient at 500 °C for 1 and 10 min. ► X-ray diffraction and depth profiles of SIMS revealed the mixture of Ir and Ir oxides (IrO, IrO2) that have not been formed in the whole gate contact layer thickness. ► Ir oxides based gate contact layers for design of thermally stable HEMT devices with an enhancement mode of operation could be available.