کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363514 | 1388303 | 2008 | 5 صفحه PDF | دانلود رایگان |
Sputtering of organic materials using a C60 primary ion beam has been demonstrated to produce significantly less accumulated damage compared to sputtering with monatomic and atomic-cluster ion beams. However, much about the dynamics of C60 sputtering remains to be understood. We introduce data regarding the dynamics of C60 sputtering by evaluating TOF-SIMS depth profiles of bulk poly(methyl methacrylate) (PMMA). Bulk PMMA provides an ideal test matrix with which to probe C60 sputter dynamics because there is a region of steady-state secondary ion yield followed by irreversible signal degradation. C60 sputtering of PMMA is evaluated as a function of incident ion kinetic energy using 10Â keV C60+, 20Â keV C60+ and 40Â keV C60++ primary ions. Changes in PMMA chemistry, carbon accumulation and graphitization, and topography as a function of total C60 ion dose at each accelerating potential is addressed.
Journal: Applied Surface Science - Volume 255, Issue 4, 15 December 2008, Pages 819-823