MD simulation study of the sputtering process by high-energy gas cluster impact

We performed molecular dynamics (MD) simulations to study the characteristic sputtering process with large cluster ion impact. The statistical properties of incident Ar and sputtered Si atoms were examined using 100 different MD simulations with Ar1000 cluster impacting on a Si(0 0 1) target at a total acceleration energy of 50 keV. The results show that the kinetic energy distribution of Ar atoms after impact obeys the high-temperature Boltzmann distribution due to thermalization through high-density multiple collisions on the target. On the other hand, the kinetic energy distribution of sputtered target atoms demonstrates a hybrid model of thermalization and collision-cascade desorption processes.