کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363739 | 1388305 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
In this article, the structural and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm2Ti2O7 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm2Ti2O7 structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 6, 1 January 2010, Pages 1845-1848
Journal: Applied Surface Science - Volume 256, Issue 6, 1 January 2010, Pages 1845-1848
نویسندگان
Tung-Ming Pan, Li-Chen Yen,