Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

► We report the structural and electrical characteristics of nitrided hafnium oxide (HfO2) gate dielectrics. ► The nitridation process was conducted in the remote NH3 plasma at a low temperature under various radio-frequency powers. ► Significant decrease in the capacitance equivalent thickness, leakage current density, and interfacial layer thickness of the nitrided HfO2 gate dielectrics were achieved. ► The enhancement and decrease of the photoluminescence intensity from Si was also observed as a result of the hydrogen passivation and depassivation effects at the HfO2/Si interface.