کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363902 | 1388308 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characteristics of transparent p-type ZnO film by Al and N co-doping method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Al-N co-doped ZnO films were fabricated by gaseous ammonia annealing at various temperatures. The structure and the electrical properties of Al-N-doped ZnO films strongly depend on the annealing temperature. XRD and SEM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (â¼85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with high carrier concentration of 8.3 Ã 1018 cmâ3 and low resistivity of 25.0 Ω cm when the annealing temperature is 700 °C. Also the growth process of Al-N co-doped at various temperatures is discussed in detail.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 15, 30 May 2008, Pages 4508-4511
Journal: Applied Surface Science - Volume 254, Issue 15, 30 May 2008, Pages 4508-4511
نویسندگان
Li-Dan Tang, Yue Zhang, Xiao-Qin Yan, You-Song Gu, Zi Qin, Ya Yang,