کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363954 | 1388308 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Local field-emission characteristic of individual AlN cone fabricated by focused ion-beam etching method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Highly (0Â 0Â 2)-oriented AlN film was deposited on n-type (1Â 0Â 0)-oriented silicon substrates by the radio frequency magnetron sputtering method. An individual AlN cone with high aspect ratio was fabricated by the focused ion-beam (FIB) etching process in the surface of an as-formed AlN film. This etching method can easily control the tip radius and height to obtain AlN cones with different aspect ratios. The field-emission property of the individual AlN cone was measured in a scanning electron microscopy system equipped with a movable probe as the anode above the AlN tip. The results indicated that the as-formed single AlN cone with high aspect ratio possessed good field-emission ability although it only had a tiny emission area. Compared with a single Si tip fabricated by the same method, a single AlN cone exhibits better field-emission ability, and hence, has great potential as a promising candidate of point electron source for application in vacuum electronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 15, 30 May 2008, Pages 4840-4844
Journal: Applied Surface Science - Volume 254, Issue 15, 30 May 2008, Pages 4840-4844
نویسندگان
Y.L. Li, C.Y. Shi, J.J. Li, C.Z. Gu,