کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5364092 | 1388311 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Densely packed Ge quantum dots grown on SiO2/Si substrate
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Densely packed Ge quantum dots grown on SiO2/Si substrate Densely packed Ge quantum dots grown on SiO2/Si substrate](/preview/png/5364092.png)
چکیده انگلیسی
We studied the growing process of Ge dots on silicon substrates covered with an ultrathin silicon dioxide buffer layer which was formed with simple chemical procedure. Uniform and densely packed (1011Â cmâ2) quantum dots (QDs) were obtained by optimizing the growth parameter with the MBE method. The influence of temperature, coverage, as well as the post-annealing process, on the epitaxial and non-epitaxial nanodots formation was evaluated. Nano-sized high density quantum dots were also realized with different growing conditions, whose structural and growing mechanism were discussed under the help of SEM and RHEED results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 3, 15 November 2009, Pages 768-772
Journal: Applied Surface Science - Volume 256, Issue 3, 15 November 2009, Pages 768-772
نویسندگان
L. Zhang, H. Ye, Y.R. Huangfu, C. Zhang, X. Liu,