High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

► A new kind of substrate (porous silicon) was used. ► Also this research introduces an easy and safe method to grow high quality GaN NWs. ► This is a new growth process to decrease the cost, complexity of growth of GaN NWs. ► It is a controllable method to synthesize GaN NWs by thermal evaporation.