کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5364252 1388313 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Current patterning of 6H-SiC(0 0 0 1) surface by AFM
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Current patterning of 6H-SiC(0 0 0 1) surface by AFM
چکیده انگلیسی
The Atomic Force Microscope (AFM) with the conducting cantilever has been used as a tool for controlled printing the well-defined shapes of conductive paths on the 6H-SiC(0 0 0 1) surface as well as paths connecting the shapes. For clean 6H-SiC(0 0 0 1) samples the metal-tip/sample contact is of the diode type. The conditions have been found (tip/sample voltage, current) for which the local morphology of the surface is modified during current flow between the tip and the sample. Such a modified surface shows quite a different conduction type of the tip/sample surface contact than that of the unmodified surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 14, 15 May 2008, Pages 4332-4335
نویسندگان
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