Preferential growth of Si films on 6H-SiC(0Â 0Â 0Â 1) C-face

► Si films are prepared on SiC C-face by low-pressure chemical vapor deposition. ► Preferential growth orientation of 〈1 1 1〉 can be achieved in a temperature range. ► Si films grown on SiC C-face show a better crystal quality than that of Si-face. ► Si/SiC structures are analyzed by GULP. ► Each of Si/SiC C-face interface energy are calculated.