Optimization of sputtering parameters for SmCo thin films using design of experiments

A design of experiments (DOE) study on the optimization of DC magnetron sputtering parameters for SmCo films was carried out using a Taguchi-fractional factorial, L8 (24−1) design methodology. Four important sputtering parameters, viz., sputtering pressure, DC power, substratetarget distance and sputtering time were considered in their upper, standard and lower levels of their predefined range in order to investigate the range of processing conditions and their effect on the film quality. The attributes of SmCo thin films were quantified with respect to surface roughness, thickness, crystallite size, phase composition and coercivity. The significance of each process parameter as well as the optimal combination of sputtering parameters to achieve the desired film characteristics such as finer crystallite size, low surface roughness and high coercivity was obtained using statistical analysis of the experimental results by the analysis of variance (ANOVA) method.

► DOE was used to study the effect sputtering process parameters on SmCo films. ► Significance of each process parameters was calculated using ANOVA calculations. ► Sputtering pressure was significant factor in controlling crystallite size. ► Sputtering pressure and sputtering time were the most important factors for high coercivity. ► Optimal combination of process parameters for desired film characteristics was established.