Photoemission studies of the surface electronic properties of L-CVD SnO2 ultra thin films

► XPS core level studies allowed us to determine the variation of interface Fermi level position for L-CVD SnO2 ultrathin films after the various technological treatments. ► Valence band XPS studies showed the existence of two different bands of filled electronic states localized about 6.0 eV and 3.0 eV below the Fermi level, respectively. ► The variation of surface electronic properties of L-CVD SnO2 ultrathin films was assigned to the variation of their surface chemistry, including carbon contamination.