کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5364938 1388323 2008 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of ion beam sputter deposited W and Si films and W/Si interfaces by grazing incidence X-ray reflectivity, atomic force microscopy and spectroscopic ellipsometry
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Characterization of ion beam sputter deposited W and Si films and W/Si interfaces by grazing incidence X-ray reflectivity, atomic force microscopy and spectroscopic ellipsometry
چکیده انگلیسی

An ion beam sputtering system, which uses a commercial ECR microwave based plasma ion source, has been designed and fabricated in-house for deposition of soft X-ray multilayer mirrors. To begin with, in the ion beam sputtering system W, Si thin films, W/Si bi-layer and W/Si/W tri-layer samples have been deposited on c-Si substrates as precursors to W/Si multilayer stack. The samples have been characterized by grazing incidence X-ray reflectivity (GIXR), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. By analyzing the results, density, thickness, surface roughness of the single layer samples and interface width of the bi-layer and tri-layer samples have been estimated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 11, 30 March 2008, Pages 3347-3356
نویسندگان
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