کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365235 | 1388327 | 2012 | 6 صفحه PDF | دانلود رایگان |
InN films with the wurtzite structure have been grown directly on YSZ (1Â 0Â 0) substrate by the RF-magnetron sputtering technique. Strongly (0Â 0Â 2) oriented films with smooth surfaces (0.7-2.9Â nm surface roughness depending on substrate temperature), were grown within 30Â min. Films deposited for 60Â min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7Â eV were found to redshift with increasing film thickness and substrate temperature.
⺠InN/YSZ (1 0 0) films grown by the reactive RF-magnetron sputtering technique. ⺠Film texture and surface roughness change with growth time and substrate temperature. ⺠3D pyramidal islands developed on top of the films. ⺠Photoluminescence peak redshift with increasing film thickness and growth temperature.
Journal: Applied Surface Science - Volume 258, Issue 16, 1 June 2012, Pages 6046-6051