کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5365307 | 1388328 | 2007 | 6 صفحه PDF | دانلود رایگان |
Iodine doped ZnSe thin films were prepared onto uncoated and aluminium (Al) coated glass substrates using vacuum evaporation technique under a vacuum of 3Â ÃÂ 10â5Â Torr. The composition, structural, optical and electrical properties of the deposited films were analyzed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and study of I-V characteristics, respectively. In the RBS analysis, the composition of the deposited film is calculated as ZnSeI0.003. The X-ray diffractograms reveals the cubic structure of the film oriented along (1Â 1Â 1) direction. The structural parameters such as crystallite size, strain and dislocation density values are calculated as 32.98Â nm, 1.193Â ÃÂ 10â3Â linâ2Â mâ4 and 9.55Â ÃÂ 1014Â lin/m2, respectively. Spectroscopic ellipsometric (SE) measurements were also presented for the prepared iodine doped ZnSe thin films. The optical band gap value of the deposited films was calculated as 2.681Â eV by using the optical transmittance measurements and the results are discussed. In the electrical studies, the deposited films exhibit the VCNR conduction mechanism. The iodine doped ZnSe films show the non-linear I-V characteristics and switching phenomena.
Journal: Applied Surface Science - Volume 253, Issue 11, 30 March 2007, Pages 5137-5142