کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365344 | 1388329 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field electron emission from HfNxOy thin films deposited by direct current sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
HfNxOy thin films were deposited on Si substrates by direct current sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM indicates that the film is composed of nanoparticles. AFM indicates that there are no sharp protrusions on the surface of the film. XRD pattern shows that the films are amorphous. The field electron emission properties of the film were also characterized. The turn-on electric field is about 14 V/μm at the current density of 10 μA/cm2, and at the electric field of 24 V/μm, the current density is up to 1 mA/cm2. The field electron emission mechanism of the HfNxOy thin film is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 10, 15 March 2008, Pages 3074-3077
Journal: Applied Surface Science - Volume 254, Issue 10, 15 March 2008, Pages 3074-3077
نویسندگان
Xing-Min Cai, Fan Ye, Er-Qing Xie, Dong-Ping Zhang, Ping Fan,