کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5365344 1388329 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Field electron emission from HfNxOy thin films deposited by direct current sputtering
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Field electron emission from HfNxOy thin films deposited by direct current sputtering
چکیده انگلیسی

HfNxOy thin films were deposited on Si substrates by direct current sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM indicates that the film is composed of nanoparticles. AFM indicates that there are no sharp protrusions on the surface of the film. XRD pattern shows that the films are amorphous. The field electron emission properties of the film were also characterized. The turn-on electric field is about 14 V/μm at the current density of 10 μA/cm2, and at the electric field of 24 V/μm, the current density is up to 1 mA/cm2. The field electron emission mechanism of the HfNxOy thin film is also discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 10, 15 March 2008, Pages 3074-3077
نویسندگان
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