کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365506 | 1388331 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
VO2 thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO2 thin films on glass substrates. X-ray diffraction studies showed that the VO2 thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO2 deposition were optimized to grow highly b-axis oriented VO2 thin films. The metal-insulator transition properties of the VO2 film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 22, 1 September 2010, Pages 6834-6837
Journal: Applied Surface Science - Volume 256, Issue 22, 1 September 2010, Pages 6834-6837
نویسندگان
Te-Wei Chiu, Kazuhiko Tonooka, Naoto Kikuchi,