کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365530 | 1388332 | 2007 | 5 صفحه PDF | دانلود رایگان |
Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al2O3) ceramic target in Ar + H2 ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H2-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H2-flux. The results indicate that H2-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 Ã 10â4 Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H2-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.
Journal: Applied Surface Science - Volume 253, Issue 6, 15 January 2007, Pages 2999-3003