کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365535 | 1388332 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing](/preview/png/5365535.png)
چکیده انگلیسی
We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 °C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 °C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 ± 0.10 eV for such a process was calculated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 6, 15 January 2007, Pages 3034-3040
Journal: Applied Surface Science - Volume 253, Issue 6, 15 January 2007, Pages 3034-3040
نویسندگان
I. KovaÄeviÄ, B. Pivac, P. DubÄek, H. Zorc, N. RadiÄ, S. Bernstorff, M. Campione, A. Sassella,