کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365558 | 1388332 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si growth effects on the formation of Er silicide nanostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, an ultra-high vacuum scanning tunneling microscopy has been utilized to study the effects of Si atoms to the formation and growth evolution of Er silicide nanostructures. Si evaporation is performed on the vicinal Si(0Â 0Â 1) surface as well as Er growth under different growth conditions: growth procedure, annealing temperature and duration time. The experimental results show that the Si evaporation performed at a high temperature plays a key role on the growth of Er silicide nanostructures. The deposited Si atoms become a significant source of the Si reactant and mainly affect the early growth stage of the nanostructures. It is also shown that Er atom is possibly another diffusing species during the growth of Er silicide nanostructures on the Si(0Â 0Â 1) surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 6, 15 January 2007, Pages 3184-3189
Journal: Applied Surface Science - Volume 253, Issue 6, 15 January 2007, Pages 3184-3189
نویسندگان
Ting Ji, Junqiang Song, Wei Zhou, Qun Cai,