کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365662 | 1388335 | 2008 | 6 صفحه PDF | دانلود رایگان |
The chemical structure and site location of sulfur atoms on n-GaAs (1Â 0Â 0) surface treated by bombardment of S+ ions over their energy range from 10 to 100Â eV have been studied by X-ray photoelectron spectroscopy and low energy electron diffraction. The formation of Ga-S and As-S species on the S+ ion bombarded n-GaAs surface is observed. An apparent donor doping effect is observed for the n-GaAs by the 100Â eV S+ ion bombardment. It is found that the S+ ions with higher energy are more effective in the formation of Ga-S species, which assists the n-GaAs (1Â 0Â 0) surface in reconstruction into an ordered (1Â ÃÂ 1) structure upon subsequent annealing. The treatment is further extended to repair Ar+ ion damaged n-GaAs (1Â 0Â 0) surface. It is found that after a n-GaAs (1Â 0Â 0) sample is damaged by 150Â eV Ar+ ion bombardment, and followed by 50Â eV S+ ion treatment and subsequent annealing process, finally an (1Â ÃÂ 1) ordering GaAs (1Â 0Â 0) surface with low surface states is obtained.
Journal: Applied Surface Science - Volume 254, Issue 24, 15 October 2008, Pages 8029-8034