کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365828 | 1388338 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Schottky diode based on porous GaN for hydrogen gas sensing application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This article reports the study of Pd Schottky contact on porous n-GaN for hydrogen gas sensing. Upon exposure to 2% H2 in N2, porous GaN sensor exhibited significant change of current. Morphological studies revealed that Pd contact deposited on porous GaN has ridge-trench-like morphology, a dense porous network was found in between the ridges. The dramatic change of current was attributed to the unique microstructure at Pd/porous GaN interface, which allowed higher accumulation of hydrogen; this resulted in a stronger effect of H-induced dipole layer and led to a significant change in the electrical characteristics of the porous sensor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 24, 15 October 2007, Pages 9525-9528
Journal: Applied Surface Science - Volume 253, Issue 24, 15 October 2007, Pages 9525-9528
نویسندگان
F.K. Yam, Z. Hassan,