کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365834 | 1388339 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deposition of aluminum nitride thin film on Si(1 1 1) by KrF excimer laser and its characterizations
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and the study of the effects of substrate temperature and laser fluences. Deposition rate of AlN thin film at 0.3Â Ã /pulse has been achieved with laser fluence of 1500Â mJ/cm2 and at substrate temperature of 250Â K, and this shows the enhancement of the deposition rate at low substrate temperature. Surface morphology of the deposited films is characterized by atomic force microscopy (AFM). In addition, the electrical performance of the MIS devices with AlN thin films prepared in this experiment has been characterized.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 8, 15 February 2008, Pages 2211-2215
Journal: Applied Surface Science - Volume 254, Issue 8, 15 February 2008, Pages 2211-2215
نویسندگان
Ming Chang Shih, Chi Wei Liang, Ping Ju Chaing,