کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366009 | 1388342 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Luminescence properties of type-II quantum well light-emitting diodes formed with NPB and Alq3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The organic quantum well devices which are similar to the type-II quantum well of inorganic semiconductor have been fabricated. In the electroluminescence, the blue shift of spectrum with increasing applied voltage is observed, which is interpreted by exciton confinement effect and polarization effect, and the generation of exciton, including carrier injection and energy transfer, is discussed. This energy transfer from barrier to well is studied by photoluminescence and is interpreted in terms of Förster energy transfer. The electromodulation of photoluminescence demonstrates the quenching mainly comes from the dissociation of exciton in NPB and that in Alq3 is very stable.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 10, 15 March 2007, Pages 4542-4545
Journal: Applied Surface Science - Volume 253, Issue 10, 15 March 2007, Pages 4542-4545
نویسندگان
Jin-Zhao Huang, Zheng Xu, Su-Ling Zhao, Fu-Jun Zhang, Yong Wang,