کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5366063 | 1388343 | 2006 | 4 صفحه PDF | دانلود رایگان |
Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270Â K under hydrostatic argon pressure (HP) up to 1.1Â GPa are investigated. To prepare Si:H, Czochralski grown 0Â 0Â 1 oriented single crystalline Si wafer with 50Â nm thick surface SiO2 layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24Â keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000Â nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO2, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.
Journal: Applied Surface Science - Volume 252, Issue 18, 15 July 2006, Pages 6115-6118