کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366083 | 1388343 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Current-voltage analysis of a-Si:H Schottky diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Current-voltage analysis of a-Si:H Schottky diodes Current-voltage analysis of a-Si:H Schottky diodes](/preview/png/5366083.png)
چکیده انگلیسی
Direct current (dc)-voltage (I-V) characteristics of the hydrogenated amorphous silicon (a-Si:H) Schottky diode have been measured at different temperatures under dark and light. From the fourth quadrant of illuminated characteristics, fill factor (FF) values were obtained for each temperature measured (173-297Â K). We have found that FF increases very little as the temperature is decreased. The measured data from I-V characteristics has been analyzed in detail. In particular, from dark I-V characteristics obtained, the density of state (DOS) near the Fermi level was determined using a simple model based on the space-charge limited current (SCLC). On the other hand, from the illuminated I-V characteristics, the density of carriers was calculated for each temperature using the analysis of diode equation as known. A comparison of the carrier density and the measured photocurrent as a function of the reverse temperature was also made and a good correspondence was obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 18, 15 July 2006, Pages 6269-6274
Journal: Applied Surface Science - Volume 252, Issue 18, 15 July 2006, Pages 6269-6274
نویسندگان
Mehmet Åahin, Haziret DurmuÅ, Ruhi Kaplan,