کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366140 | 1388344 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Age-induced oxide on cleaved surface of layered GaSe single crystals
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
It is shown that a long-term keeping of a layered gallium monoselenide at room temperature results in formation of the intrinsic oxide at a cleaved surface of semiconductor. It is found that the chemical compositions of the intrinsic oxide at the surfaces of the intentionally undoped and doped samples of GaSe are different. The electrical properties of the GaSe-intrinsic oxide system are presented. It is established that intrinsic oxide films at the surface of GaSe are characterized by current instability with N-type current-voltage characteristic. The influence of relative humidity on changes of capacitance and surface resistivity of the intrinsic oxide is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 7, 30 January 2008, Pages 2067-2071
Journal: Applied Surface Science - Volume 254, Issue 7, 30 January 2008, Pages 2067-2071
نویسندگان
S.I. Drapak, S.V. Gavrylyuk, Z.D. Kovalyuk, O.S. Lytvyn,