کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366145 | 1388344 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterization of laser-generated silicon plasma Characterization of laser-generated silicon plasma](/preview/png/5366145.png)
A study of visible laser ablation of silicon, in vacuum, by using 3Â ns Nd:YAG laser radiation is reported. Nanosecond pulsed ablation, at an intensity of the order of 1010Â W/cm2, produces high non-isotropic emission of neutrals and ionic species. Mass quadrupole spectrometry, coupled to electrostatic ion deflection, allows estimation of the energy distributions of the emitted species from plasma. Neutrals show typical Boltzmann-like distributions while ions show Coulomb-Boltzmann-shifted distributions depending on their charge state. Time-of-flight measurements were also performed by using an ion collector consisting of a collimated Faraday cup placed along the normal to the target surface. Surface profiles of the craters, created by the laser radiation absorption, permitted to study the ablation threshold and ablation yields of silicon in vacuum. The plasma fractional ionization, temperature and density were evaluated by the experimental data. A special regard is given to the ion acceleration process occurring inside the plasma due to the high electrical field generated at the non-equilibrium plasma conditions. The angular distribution of the neutral and ion species is discussed.
Journal: Applied Surface Science - Volume 254, Issue 7, 30 January 2008, Pages 2090-2095