کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5366222 1388345 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence activity of Yang and Secco etched multicrystalline silicon material
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Photoluminescence activity of Yang and Secco etched multicrystalline silicon material
چکیده انگلیسی

Ultraviolet and blue-green photoluminescence (PL) was investigated on multicrystalline silicon (mc-Si) samples chemically etched by Secco and Yang solutions. The samples were characterized by dislocation density (105-106 cm−2). The form of etched pits is triangular with Yang etch and like a honeycomb with Secco etch as observed with a scanning electron microscope (SEM). These textures of mc-Si wafers give a PL activity similar to that obtained with nanostructures of porous silicon (PS) as reported in the literature. The ultraviolet PL spectra observed with Yang etch shift to the blue-green spectrum range when applying Secco etch. In our experiments we have observed 3-5 μm diameter macro pores separated by a high density of nanowalls. These observations suggest that the origin of the PL activity are quantum dots resulting from the silicon nanocrystallites obtained after few minutes of chemical etching.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 23, 30 September 2006, Pages 8337-8340
نویسندگان
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