کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5366272 1388346 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of growth pressure on the electrical properties of boron-doped polycrystalline diamond films
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Influence of growth pressure on the electrical properties of boron-doped polycrystalline diamond films
چکیده انگلیسی

Heavily boron-doped diamond films are synthesized by the hot-filament chemical vapor deposition method under the gas mixtures of H2, CH4 and trimethyl borate. The measurement results of scanning electron microscopy, Raman spectroscopy, X-ray diffractometer and electrical properties showed the morphologies, microstructures, carrier concentration and superconducting transition temperature for as-grown diamond films were dependent on the change of growth pressure, and specially its carrier concentrations could be adjusted from 1019 to 1021 cm−3 by increasing growth pressures from 2.5 to 5 kPa. And further, the effects of growth pressure on the film microstructural property and the doping level dependence of the superconducting transition temperature were discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 23, 15 September 2009, Pages 9522-9525
نویسندگان
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