کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366418 | 1388349 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes](/preview/png/5366418.png)
چکیده انگلیسی
Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion (SHI) beam (80 MeV 16O6+), using in situ current-voltage characterization technique. The diode parameters like ideality factor, barrier height, and leakage current are observed to vary with irradiation fluence. Significantly, the diode performance improves at a high fluence of 2 Ã 1013 ions cmâ2 with a large decrease of reverse leakage current in comparison to the original as deposited sample. The Schottky barrier height (SBH) also increases with fluence. At a high irradiation fluence of 5 Ã 1013 ions cmâ2 the SBH (0.62 ± 0.01 eV) is much larger than that of the as deposited sample (0.55 ± 0.01 eV). The diode parameters remain stable over a large range of irradiation up to fluence of 8 Ã 1013 ions cmâ2. A prominent annealing effect of the swift ion beam owing to moderate electronic excitation and high ratio of electronic energy loss to the nuclear loss is found to be responsible for the improvement in diode characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 2, 15 November 2007, Pages 459-463
Journal: Applied Surface Science - Volume 254, Issue 2, 15 November 2007, Pages 459-463
نویسندگان
A. Tarun Sharma, Shahnawaz Shahnawaz, Sandeep Kumar, Yashpal S. Katharria, Dinakar Kanjilal,