کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366424 | 1388349 | 2007 | 5 صفحه PDF | دانلود رایگان |
InMnP:Zn epilayers doped with Mn (0.290Â at.%) were annealed at 723-873Â K for 60Â s and 473-573Â K for 30Â min. Using Auger electron spectroscopy, the changes in concentration profiles of the epilayers correlated to the ferromagnetic origin as a function of the annealing conditions. The epilayers annealed at 723-873Â K for 60Â s exhibited InMn3 persisting up to 583Â K. For InMnP:Zn epilayers annealed at 523-573Â K for 30Â min, the concentration depth profiles remained flat so that the stoichiometry was well maintained without precipitates such as InMn3 and MnP comparable to the as-grown InP:Zn before doping Mn. These samples showed clear ferromagnetic hysteresis loops. Curie temperature was about 150Â K. A ferromagnetic hysteresis loop was obtained even at very lower annealing temperature of 473Â K.
Journal: Applied Surface Science - Volume 254, Issue 2, 15 November 2007, Pages 494-498