Site-specific electron-induced cross-linking of ortho-carborane to form semiconducting boron carbide

► Semiconducting boron carbide films were formed by electron beam bombardment of ortho-carborane. ► Site-specific decomposition and cross-linking between boron sites of adjacent icosahedra is the result of electron bombardment at 200 eV. ► A surface photovoltage effect is observed in the valence band photoemission spectra after electron bombardment indicative of a p-type semiconductor.