کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366576 | 1388351 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of post-annealing on the properties of Sc-doped ZnO transparent conductive films deposited by radio-frequency sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Sc-doped ZnO transparent conductive films are deposited on glass substrates by radio-frequency sputtering. The influence of post-annealing on the structural, morphologic, electrical, and optical properties of the films is investigated by energy dispersion X-ray spectroscopy, X-ray diffraction, Hall measurement, and optical transmission spectroscopy. The experimental results show that these films are polycrystalline with a preferred [0 0 1] orientation. The lowest resistivity of 2.6 Ã 10â4 Ω cm is obtained from the film annealed at 500 °C. The average optical transmittance of the films is over 90%. These results suggest that Sc-doped ZnO is a good candidate for fabricating high performance transparent conductive films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 18, 30 June 2009, Pages 7942-7945
Journal: Applied Surface Science - Volume 255, Issue 18, 30 June 2009, Pages 7942-7945
نویسندگان
Xueqiang Liu, Weihong Bi, Zhaolun Liu,