کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366765 | 1388354 | 2007 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Influence of N2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering Influence of N2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering](/preview/png/5366765.png)
Hafnium nitride (Hf-N) thin films were deposited on fused silica at different N2 flow ratio (N2/N2 + Ar) using a reactive DC magnetron sputtering system. A gradual evolution in the composition of the films from Hf3N2, HfN, to higher nitrides was found through X-ray diffraction (XRD). Films of Hf3N2 and HfN show positive temperature coefficients of resistivity, while higher nitride has a negative one. Highly oriented growth of (0 0 1) Hf3N2 and NaCl-structure (1 0 0) HfN films were fabricated on fused silica substrate at relatively lower temperature of 300 °C. The electrical resistivity values of both as-deposited and post-deposition annealed films were measured by a four-point probe method. The obtained minimum resistivity of as-deposited film is 20 μΩ cm, and this result shows potential application of HfN films as electrode materials in electronic devices.
Journal: Applied Surface Science - Volume 253, Issue 20, 15 August 2007, Pages 8538-8542