کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5366793 1388355 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties of nanocrystalline Al-Cu-O films reactively sputtered by DC pulse dual magnetron
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Properties of nanocrystalline Al-Cu-O films reactively sputtered by DC pulse dual magnetron
چکیده انگلیسی

The article reports on the effect of the addition of copper in the Al2O3 film on its mechanical and optical properties. The Al-Cu-O films were reactively co-sputtered using DC pulse dual magnetron in a mixture of Ar + O2. One magnetron was equipped with a pure Al target and the second magnetron with a composed Al/Cu target. The amount of Al and Cu in the Al-Cu-O film was controlled by the length of pulse at the Al/Cu target. The Al-Cu-O films with ≤16 at.% Cu were investigated in detail. The addition of Cu in Al2O3 film strongly influences its structure and mechanical properties. It is shown that (1) the structure of Al-Cu-O film gradually varies with increasing Cu content from γ-Al2O3 at 0 at.% Cu through (Al8−2x,Cu3x)O12 nanocrystalline solid solution to CuAl2O4 spinel structure, (2) the Al-Cu-O films with ≥3 at.% Cu exhibit (i) relatively high hardness H increasing from ∼15 GPa to ∼20 GPa, (ii) enhanced elastic recovery We increasing from ∼67% to ∼76% with increasing Cu content from ∼5 to ∼16 at.% Cu and (iii) low values of Young's modulus E* satisfying the ratio H/E* > 0.1 at ≥5 at.% Cu, and (3) highly elastic Al-Cu-O films with H/E* > 0.1 exhibit enhanced resistance to cracking during indentation under high load.

► The effect of Cu addition in Al2O3 on its properties. ► The structure changes from Al2O3 through Al-Cu-O solid solution to CuAl2O4. ► Hardness of Al-Cu-O films increases with increasing Cu content. ► Hard Al-Cu-O films exhibit enhanced resistance to cracking compared to pure Al2O3.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 258, Issue 5, 15 December 2011, Pages 1762-1767
نویسندگان
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