کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366842 | 1388356 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical modeling of ultrashort-pulse laser ablation of silicon
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Numerical modeling of ultrashort-pulse laser ablation of silicon Numerical modeling of ultrashort-pulse laser ablation of silicon](/preview/png/5366842.png)
چکیده انگلیسی
Silicon ablation by a single ultrashort laser pulse is simulated through a computer model. The agreement between results obtained through the model and experimental data found in the literature supports the hypothesis made by the authors in considering thermal evaporation as the dominant ablation mechanism in silicon. Two distinctive thresholds are defined for the ablation procedure leading to a better interpretation of experimental data. The dependence of ablation fluence thresholds on both wavelength and pulse width is discussed. An approximate analytical model describing the crater formation process is proposed and indicative results are presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 17, 15 June 2009, Pages 7605-7609
Journal: Applied Surface Science - Volume 255, Issue 17, 15 June 2009, Pages 7605-7609
نویسندگان
D.P. Korfiatis, K.-A. Th. Thoma, J.C. Vardaxoglou,