Cu-doped SiOxCy nanostructures induced by radio frequency plasma jet using hexamethyldisiloxane

Formation of Cu-doped SiOxCy nanostructures has been studied by using hexamethyldisiloxane (HMDSO)/H2/Ar radio frequency (RF) plasma, where a copper tube was utilized as power electrode to generate plasma jet. Tree-like nanostructures were obtained at low concentration of HMDSO. One can find the initial vertical growth of nanowires (NWs) and the spherical structures on sidewalls of the bended NWs, which were attributed to the vertical gas flow and secondary catalyzing due to copper from the ambience, respectively. However, the fragments with big mass were too many to synthesize nanostructure at high concentration of HMDSO. More Cu particles were transported to the substrate while an RF bias was applied to the substrate, which restrained the NWs growth catalyzed by Au and resulted in the formation of acaleph-like nanostructures.

► Cu-doped SiOxCy nanostructures were fabricated using radio frequency hexamethyldisiloxane (HMDSO)/H2/Ar plasma jet. ► Tree-like nanostructures with spherical structures on sidewalls of nanowires were obtained at low concentration of HMDSO with vertical gas flow. ► Acaleph-like nanostructures were synthesized while a radio frequency bias was applied to the substrate.